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Simulation of carbon atoms diffuse in amorphous media and collected at the interface

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Dear, I am beginner to use COMSOL software and I am not familiar with this software. However, you guys can help me out.

I want to simulate a geometry of Nickel (300nm thick)/Silicon. Carbon atoms strike at nickel surface and diffuse at high temperature inside nickel and reach at interface of Nickel/silicon. However, silicon is crystalline which does not allow carbon atoms to diffuse any more.

So I want to find out in how many minutes nickel surface will be filled with carbon atoms and how much time it will take for a carbon atom to reach at the interface. Moreover, what will be the affect of temperature on diffusion of carbon atoms.
What will be the affect on the diffusion of carbon atoms if we change the thickness of nickel.?


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