I have used the semiconductor module to model the charge extraction from a layer of semiconductor sandwiched between two schottky contacts for a given charge carrier generation profile. I define the generation profile as an interpolation function that varies with the thickness of the layer. (ID simulation). I haven't implemented any recombination for the model.
When I try to verify the results I find a discrepancy with the total number of charges defined by the generation profile, and the extracted current at the terminals. Would it be correct to assume that all the charges defined by the generation profile would be extracted eventually if no recombination is defined? or have I missed some mechanism built in to the semiconducting module, account for the loss of charges?
When I try to verify the results I find a discrepancy with the total number of charges defined by the generation profile, and the extracted current at the terminals. Would it be correct to assume that all the charges defined by the generation profile would be extracted eventually if no recombination is defined? or have I missed some mechanism built in to the semiconducting module, account for the loss of charges?